NDP5060L, NDB5060L دیتاشیت

NDP5060L, NDB5060L

مشخصات دیتاشیت

نام دیتاشیت NDP5060L, NDB5060L
حجم فایل 487.561 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت NDP5060L, NDB5060L

دانلود دیتاشیت

سایر مستندات

NDB5060L 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NDB5060L
  • Operating Temperature: -65°C~+175°C@(Tj)
  • Power Dissipation (Pd): 68W
  • Total Gate Charge (Qg@Vgs): 17nC@5V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 840pF@30V
  • Continuous Drain Current (Id): 26A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 75pF@30V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@10V,13A
  • Package: TO-263AB
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: NDB506
  • detail: N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB)

محصولات مشابه